Tohoku University Technology: High-density plasma sputtering device: T16-141
Damage-less sputtering / Independent control of ion energy and flux / Useable in ferromagnetic target
With the increase of request for device miniaturization and thin crystal film quality improvement, the ion damage on substrate has become a major issue in sputtering. The magnetron sputtering method is widely used but since the plasma is formed directly between the target material and the substrate, “1 it is difficult to avoid ion damage”. This issue is amplified when generating highdensity plasma. In addition, since a single power supply is responsible for both the plasma generation and ion attraction, “2 it is impossible to independently control the ion flux and energy flowing into the target material”. Moreover, since the plasma is confined by the magnetic leakage flux on the target surface, “3 it is difficult to use for ferromagnetic material target”. This invention solves above 1/2/3 issues by generating highdensity plasma with helicon discharge and by controlling the plasma shape with a curved magnetic field, etc. This invention could also be considered to be used as a heating mechanism of the target material, or as an uniform & fast film deposition.
- 企業：Tohoku Techno Arch Co., Ltd.
- 価格：Other
